MOTOROLA MHPM7B12A120A

  • MHPM7B12A120A

MHPM7B12A120A Insulated Gate Bipolar Transistor, 12A I(C), 1200V V(BR)CES, N-Channel, PLASTIC PACKAGE-25; MHPM7B12A120A

· Categories: IGBT
· Manufacturer: MOTOROLA
· Price: US$
· Date Code: Please Verify on Quote
. Available Qty: 108
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Content last revised on May 25, 2023

Manufacturer Part Number: MHPM7B12A120APart Life Cycle Code: ObsoleteIhs Manufacturer: MOTOROLA INCPackage Description: FLANGE MOUNT, R-PUFM-X25Manufacturer: Motorola Semiconductor ProductsRisk Rank: 5.83Additional Feature: UL RECOGNIZEDCollector Current-Max (IC): 12 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PUFM-X25Number of Elements: 7Number of Terminals: 25Operating Temperature-Max: 125 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 60 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONVCEsat-Max: 3.5 V Insulated Gate Bipolar Transistor, 12A I(C), 1200V V(BR)CES, N-Channel, PLASTIC PACKAGE-25