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IXYS MIXA30W1200TED

  • MIXA30W1200TED
  • MIXA30W1200TED Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, SIXPACK, E2-PACK-28; MIXA30W1200TED

    · Categories: IGBT
    · Manufacturer: IXYS
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 1705
    MOQ: 1 PC
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    Content last revised on July 30, 2023

    Manufacturer Part Number: MIXA30W1200TEDPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X28Pin Count: 28Manufacturer: IXYS CorporationRisk Rank: 5.67Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 43 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X28Number of Elements: 6Number of Terminals: 28Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 150 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, SIXPACK, E2-PACK-28

    v1.2.0