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IGBT Module / LCD Display Distributor

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IXYS MIXA60W1200TED New IGBT Module

#IXYS, #MIXA60W1200TED, #IGBT_Module, #IGBT, MIXA60W1200TED Insulated Gate Bipolar Transistor, 85A I(C), 1200V V(BR)CES, N-Channel, SIXPACK, E2-PACK-28; MIXA60W1200T

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 784
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MIXA60W1200TED Specification

Sell MIXA60W1200TED, #IXYS #MIXA60W1200TED New Stock, MIXA60W1200TED Insulated Gate Bipolar Transistor, 85A I(C), 1200V V(BR)CES, N-Channel, SIXPACK, E2-PACK-28; MIXA60W1200TED, #IGBT_Module, #IGBT, #MIXA60W1200TED
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/mixa60w1200ted.html

Manufacturer Part Number: MIXA60W1200TEDPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X28Pin Count: 28Manufacturer: IXYS CorporationRisk Rank: 5.71Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 85 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X28Number of Elements: 6Number of Terminals: 28Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 290 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 85A I(C), 1200V V(BR)CES, N-Channel, SIXPACK, E2-PACK-28

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