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ON Semiconductor MJD5731T4

  • MJD5731T4

MJD5731T4 1.0 A, 350 V High Voltage PNP Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL; MJD5731T4

· Categories: IGBT
· Manufacturer: ON Semiconductor
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 917
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Content last revised on July 26, 2023

Manufacturer Part Number: MJD5731T4Brand Name: ON SemiconductorPbfree Code: ObsoleteIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PSSO-G2Pin Count: 3Manufacturer Package Code: 369CECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 5.23Case Connection: COLLECTORCollector Current-Max (IC): 1 ACollector-Emitter Voltage-Max: 350 VConfiguration: SINGLEDC Current Gain-Min (hFE): 10JESD-30 Code: R-PSSO-G2JESD-609 Code: e0Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 240Polarity/Channel Type: PNPPower Dissipation-Max (Abs): 15 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin/Lead (Sn/Pb)Terminal Form: GULL WINGTerminal Position: SINGLETime 1.0 A, 350 V High Voltage PNP Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL