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Diodes Inc MMDT5551-7-F IGBT Module

MMDT5551-7-F

#Diodes Inc, #MMDT5551_7_F, #IGBT_Module, #IGBT, MMDT5551-7-F Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, GREEN, ULTRA SMALL, PLA

· Categories: IGBT Module
· Manufacturer: Diodes Inc
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 2940
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MMDT5551-7-F Specification

Sell MMDT5551-7-F, #Diodes Inc #MMDT5551-7-F Stock, MMDT5551-7-F Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6; MMDT5551-7-F, #IGBT_Module, #IGBT, #MMDT5551_7_F
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/mmdt5551-7-f.html

Manufacturer Part Number: MMDT5551-7-FPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PDSO-G6Pin Count: 6ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 1.26Collector Current-Max (IC): 0.2 ACollector-Emitter Voltage-Max: 160 VConfiguration: SEPARATE, 2 ELEMENTSDC Current Gain-Min (hFE): 30JESD-30 Code: R-PDSO-G6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: NPNPower Dissipation-Max (Abs): 0.2 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6

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