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Rohm Semiconductor MP6M11TCR

  • MP6M11TCR

MP6M11TCR Power Field-Effect Transistor, 3.5A I(D), 30V, 0.14ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MPT6, 6 PIN; MP6M11TCR

· Categories: IGBT
· Manufacturer: Rohm Semiconductor
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 1917
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Content last revised on May 25, 2023

Manufacturer Part Number: MP6M11TCRPart Life Cycle Code: ObsoleteIhs Manufacturer: Rohm CO LTDPackage Description: SMALL OUTLINE, R-PDSO-F6ECCN Code: EAR99Manufacturer: ROHM SemiconductorRisk Rank: 5.83Case Connection: DRAINConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (ID): 3.5 ADrain-source On Resistance-Max: 0.14 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-F6Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: N-CHANNEL AND P-CHANNELPulsed Drain Current-Max (IDM): 12 ASurface Mount: YESTerminal Form: FLATTerminal Position: DUALTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 3.5A I(D), 30V, 0.14ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MPT6, 6 PIN