#IXYS, #MUBW10_06A6K, #IGBT_Module, #IGBT, MUBW10-06A6K Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, MODULE-25; MUBW10-06A6K
Manufacturer Part Number: MUBW10-06A6KPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X25Pin Count: 25Manufacturer: IXYS CorporationRisk Rank: 2.22Case Connection: ISOLATEDCollector Current-Max (IC): 12 ACollector-Emitter Voltage-Max: 600 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X25JESD-609 Code: e3Number of Elements: 7Number of Terminals: 25Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 50 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: PURE TINTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, MODULE-25