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IXYS MUBW10-12A7

  • MUBW10-12A7

MUBW10-12A7 Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel,; MUBW10-12A7

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 86
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Content last revised on June 28, 2023

Manufacturer Part Number: MUBW10-12A7Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X24Manufacturer: IXYS CorporationRisk Rank: 2.25Additional Feature: LOW SWITCHING LOSS, LOW SATURATION VOLTAGECase Connection: ISOLATEDCollector Current-Max (IC): 20 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXJESD-30 Code: R-XUFM-X24JESD-609 Code: e3Number of Elements: 7Number of Terminals: 24Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel,

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