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ON Semiconductor NJVNJD35N04G IGBT Module

NJVNJD35N04G

NJVNJD35N04G 4.0 A, 350 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE; NJVNJD35N04G

· Categories: IGBT Module
· Manufacturer: ON Semiconductor
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 2808
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NJVNJD35N04G Specification

Manufacturer Part Number: NJVNJD35N04GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPin Count: 3Manufacturer Package Code: 369CECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 2.04Collector Current-Max (IC): 4 AConfiguration: DARLINGTONDC Current Gain-Min (hFE): 300JESD-609 Code: e3Moisture Sensitivity Level: 1Operating Temperature-Max: 150 °CPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 45 WSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin (Sn)Time 4.0 A, 350 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE

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