Content last revised on December 24, 2024
PD55003 Product details
DESCRIPTION
The PD55003 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55003’s superior linearity performance makes it an ideal solution for car mobile radio.
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V
• NEW RF PLASTIC PACKAGE
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
V(BR)DSS Drain-Source Voltage 40V
VGS Gate-Source Voltage ±20V
ID Drain Current 2.5A
PDISS Power Dissipation (@ Tc = 70°C) 31.7 W
Tj Max. Operating Junction Temperature 165°C
TSTG Storage Temperature -65 to +150°C
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance 3.0°C/W
DYNAMIC
P1dB VDD = 12.5 V IDQ = 50 mA f = 500 MHz 3W