Scan Part Number

Tap the focus box or CAPTURE to scan the part number.

Pinch screen or tap 1.4x button to zoom.

Recognizing Part Number...

NIEC PDMB50A6

  • PDMB50A6
  • PDMB50A6 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel,; PDMB50A6

    · Categories: IGBT
    · Manufacturer: NIEC
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
    Submit RFQ to Get Price
    · Date Code: Please Verify on Quote
    . Available Qty: 314
    MOQ: 1 PC
    Express Shipping
    90-Day Warranty
    1-2 Days Lead Time
    100% Tested
    Whatsapp: 0086 189 2465 1869

    Content last revised on August 21, 2023

    Manufacturer Part Number: PDMB50A6Part Life Cycle Code: ObsoleteIhs Manufacturer: NIHON INTER ELECTRONICS CORPPackage Description: FLANGE MOUNT, R-XUFM-X7Manufacturer: Nihon Inter Electronics CorporationRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 50 ACollector-Emitter Voltage-Max: 600 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 250 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Nom (toff): 450 nsTurn-on Time-Nom (ton): 250 nsVCEsat-Max: 2.5 V Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel,

    v1.2.0