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Rohm Semiconductor RB521ZS8A30TE61 IGBT Module

#Rohm Semiconductor, #RB521ZS8A30TE61, #IGBT_Module, #IGBT, RB521ZS8A30TE61 Rectifier Diode, Schottky, 4 Element, 0.1A, 30V V(RRM), Silicon, DFN1608-8, 8 PIN; RB521ZS8A30TE61

· Categories: IGBT Module
· Manufacturer: Rohm Semiconductor
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 387
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RB521ZS8A30TE61 Specification

Sell RB521ZS8A30TE61, #Rohm Semiconductor #RB521ZS8A30TE61 Stock, RB521ZS8A30TE61 Rectifier Diode, Schottky, 4 Element, 0.1A, 30V V(RRM), Silicon, DFN1608-8, 8 PIN; RB521ZS8A30TE61, #IGBT_Module, #IGBT, #RB521ZS8A30TE61
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URL: https://www.slw-ele.com/rb521zs8a30te61.html

Manufacturer Part Number: RB521ZS8A30TE61Pbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: Rohm CO LTDPackage Description: R-PBCC-N8ECCN Code: EAR99HTS Code: 8541.10.00.70Manufacturer: Rohm SemiconductorRisk Rank: 7.87Additional Feature: HIGH RELIABILITYConfiguration: SEPARATE, 4 ELEMENTSDiode Element Material: SILICONDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 0.37 VJESD-30 Code: R-PBCC-N8Number of Elements: 4Number of Terminals: 8Operating Temperature-Max: 150 °COperating Temperature-Min: -55 °COutput Current-Max: 0.1 APackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: CHIP CARRIERPeak Reflow Temperature (Cel): NOT SPECIFIEDPower Dissipation-Max: 0.4 WRep Pk Reverse Voltage-Max: 30 VReverse Current-Max: 7 µAReverse Test Voltage: 10 VSubcategory: Other DiodesSurface Mount: YESTechnology: SCHOTTKYTerminal Form: NO LEADTerminal Position: BOTTOMTime Rectifier Diode, Schottky, 4 Element, 0.1A, 30V V(RRM), Silicon, DFN1608-8, 8 PIN

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