#Rohm Semiconductor, #RSR025N03TL, #IGBT_Module, #IGBT, RSR025N03TL Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconduct
Manufacturer Part Number: RSR025N03TLPbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: Rohm CO LTDPackage Description: SMALL OUTLINE, R-PDSO-G3Pin Count: 3ECCN Code: EAR99Manufacturer: Rohm SemiconductorRisk Rank: 7.81Configuration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 2.5 ADrain Current-Max (ID): 2.5 ADrain-source On Resistance-Max: 0.118 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G3JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)Terminal Form: GULL WINGTerminal Position: DUALTime Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT3, 3 PIN