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Infineon Technologies SGI02N120

  • SGI02N120

SGI02N120 Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3; SGI02N120

· Categories: IGBT
· Manufacturer: Infineon Technologies
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 626
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Content last revised on May 27, 2023

Manufacturer Part Number: SGI02N120Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: TO-262AAPackage Description: IN-LINE, R-PSIP-T3Pin Count: 3Manufacturer: Infineon Technologies AGRisk Rank: 5.78Case Connection: COLLECTORCollector Current-Max (IC): 6.2 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLEFall Time-Max (tf): 61 nsGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-262AAJESD-30 Code: R-PSIP-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 42 WQualification Status: Not QualifiedRise Time-Max (tr): 24 nsSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3