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Vishay Siliconix SIZ702DT-T1-GE3

  • SIZ702DT-T1-GE3

SIZ702DT-T1-GE3 N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel; SIZ702DT-T1-GE3

· Categories: IGBT
· Manufacturer: Vishay Siliconix
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 841
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Content last revised on May 24, 2023

Manufacturer Part Number: SIZ702DT-T1-GE3Pbfree Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPackage Description: SMALL OUTLINE, R-PDSO-N6Pin Count: 6ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 7.86Avalanche Energy Rating (Eas): 16 mJConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 16 ADrain Current-Max (ID): 13.8 ADrain-source On Resistance-Max: 0.012 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-N6Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 30 WPulsed Drain Current-Max (IDM): 50 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: NO LEADTerminal Position: DUALTime N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel