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Infineon Technologies SKB02N120

  • SKB02N120

SKB02N120 Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3; SKB02N120

· Categories: IGBT
· Manufacturer: Infineon Technologies
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 1548
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Content last revised on November 22, 2023

Manufacturer Part Number: SKB02N120Pbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: D2PAKPackage Description: SMALL OUTLINE, R-PSSO-G2Pin Count: 3ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.61Case Connection: COLLECTORCollector Current-Max (IC): 6.2 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEFall Time-Max (tf): 96 nsGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-263ABJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 42 WQualification Status: Not QualifiedRise Time-Max (tr): 12 nsSubcategory: Insulated Gate BIP TransistorsSurface Mount: YESTerminal Finish: TINTerminal Form: GULL WINGTerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3