FAIRCHILD SME6G30US60

  • SME6G30US60

SME6G30US60 Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, 17PM-CA, 17 PIN; SME6G30US60

· Categories: IGBT
· Manufacturer: FAIRCHILD
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Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 32
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Content last revised on June 3, 2023

Manufacturer Part Number: SME6G30US60Part Life Cycle Code: ObsoleteIhs Manufacturer: Fairchild SEMICONDUCTOR CORPPackage Description: FLANGE MOUNT, R-PUFM-T17Pin Count: 17Manufacturer: Fairchild Semiconductor CorporationRisk Rank: 5.84Additional Feature: LOW CONDUCTION LOSS, HIGH SPEED SWITCHINGCollector Current-Max (IC): 30 ACollector-Emitter Voltage-Max: 600 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PUFM-T17Number of Elements: 6Number of Terminals: 17Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 125 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: UPPERTransistor Application: MOTOR CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 80 nsTurn-on Time-Nom (ton): 18 nsVCEsat-Max: 2.7 V Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, 17PM-CA, 17 PIN