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Rohm Semiconductor SP8M51TB1

  • SP8M51TB1
  • SP8M51TB1 Power Field-Effect Transistor, 3A I(D), 100V, 0.19ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8; SP8M51TB1

    · Categories: IGBT
    · Manufacturer: Rohm Semiconductor
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 136
    MOQ: 1 PC
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    Content last revised on August 17, 2023

    Manufacturer Part Number: SP8M51TB1Rohs Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: Rohm CO LTDPackage Description: SMALL OUTLINE, R-PDSO-G8ECCN Code: EAR99Manufacturer: Rohm SemiconductorRisk Rank: 7.93Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 100 VDrain Current-Max (ID): 3 ADrain-source On Resistance-Max: 0.19 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G8Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNEL AND P-CHANNELPulsed Drain Current-Max (IDM): 12 ASurface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTime Power Field-Effect Transistor, 3A I(D), 100V, 0.19ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

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