Scan Part Number

Tap the focus box or CAPTURE to scan the part number.

Pinch screen or tap 1.4x button to zoom.

Recognizing Part Number...

Vishay Siliconix SQJ960EP-T1-GE3

  • SQJ960EP-T1-GE3

SQJ960EP-T1-GE3 Power Field-Effect Transistor, 8A I(D), 60V, 0.04ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN; SQJ960EP-T1-GE3

· Categories: IGBT
· Manufacturer: Vishay Siliconix
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
Submit RFQ to Get Price
· Date Code: Please Verify on Quote
. Available Qty: 2404
90-Day Warranty
Global Shipping
100% Tested
Whatsapp: 0086 189 2465 1869

Content last revised on June 8, 2023

Manufacturer Part Number: SQJ960EP-T1_GE3Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: SMALL OUTLINE, R-PSSO-G4ECCN Code: EAR99Manufacturer: Vishay IntertechnologiesRisk Rank: 1.7Avalanche Energy Rating (Eas): 12 mJCase Connection: DRAINConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 60 VDrain Current-Max (ID): 8 ADrain-source On Resistance-Max: 0.04 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PSSO-G4Number of Elements: 2Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 32 AQualification Status: Not QualifiedSurface Mount: YESTerminal Form: GULL WINGTerminal Position: SINGLETime Power Field-Effect Transistor, 8A I(D), 60V, 0.04ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN