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Vishay Siliconix SQJ960EP-T1-GE3

  • SQJ960EP-T1-GE3
  • SQJ960EP-T1-GE3 Power Field-Effect Transistor, 8A I(D), 60V, 0.04ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN; SQJ960EP-T1-GE3

    · Categories: IGBT
    · Manufacturer: Vishay Siliconix
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 2404
    MOQ: 1 PC
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    90-Day Warranty
    1-2 Days Lead Time
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    Whatsapp: 0086 189 2465 1869

    Content last revised on June 8, 2023

    Manufacturer Part Number: SQJ960EP-T1_GE3Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: SMALL OUTLINE, R-PSSO-G4ECCN Code: EAR99Manufacturer: Vishay IntertechnologiesRisk Rank: 1.7Avalanche Energy Rating (Eas): 12 mJCase Connection: DRAINConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 60 VDrain Current-Max (ID): 8 ADrain-source On Resistance-Max: 0.04 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PSSO-G4Number of Elements: 2Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 32 AQualification Status: Not QualifiedSurface Mount: YESTerminal Form: GULL WINGTerminal Position: SINGLETime Power Field-Effect Transistor, 8A I(D), 60V, 0.04ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN

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