Vishay Semiconductor Diodes Division ST083S12PFP0 IGBT Module

Manufacturer Part Number: ST083S12PFP0Part Life Cycle Code: ActiveIhs Manufacturer: VISHAY SEMICONDUCTORSPart Package Code: TO-94Package Description: POST/STUD MOUNT, O-MUPM-H3Pin Count: 4HTS Code: 8541.30.00.80Manufacturer: Vishay SemiconductorsRisk Rank: 5.14Additional Feature: HIGH SPEEDCircuit Commutated Turn-off Time-Nom: 18 µsConfiguration: SINGLEDC Gate Trigger Current-Max: 200 mADC Gate Trigger Voltage-Max: 3 VHolding Current-Max: 600 mAJEDEC-95 Code: TO-209ACJESD-30 Code: O-MUPM-H3Leakage Current-Max: 30 mANon-Repetitive Pk On-state Cur: 2500 ANumber of Elements: 1Number of Terminals: 3On-state Current-Max: 85000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: METALPackage Shape: ROUNDPackage Style: POST/STUD MOUNTQualification Status: Not QualifiedRMS On-state Current-Max: 135 ARepetitive Peak Off-state Voltage: 1200 VRepetitive Peak Reverse Voltage: 1200 VSubcategory: Silicon Controlled RectifiersSurface Mount: NOTerminal Form: HIGH CURRENT CABLETerminal Position: UPPERTrigger Device Type: SCR Silicon Controlled Rectifier, 135 A, 1200 V, SCR, TO-209AC, TO-209AC, 3 PIN