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Vishay Semiconductor Diodes Division ST333S04PFL0 IGBT Module

#Vishay Semiconductor Diodes Division, #ST333S04PFL0, #IGBT_Module, #IGBT, ST333S04PFL0 Silicon Controlled Rectifier, 518A I(T)RMS, 330000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-209AE, T

· Categories: IGBT Module
· Manufacturer: Vishay Semiconductor Diodes Division
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 425
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ST333S04PFL0 Specification

Sell ST333S04PFL0, #Vishay Semiconductor Diodes Division #ST333S04PFL0 Stock, ST333S04PFL0 Silicon Controlled Rectifier, 518A I(T)RMS, 330000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-209AE, TO-118, 3 PIN; ST333S04PFL0, #IGBT_Module, #IGBT, #ST333S04PFL0
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/st333s04pfl0.html

Manufacturer Part Number: ST333S04PFL0Pbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPart Package Code: TO-118Package Description: TO-118, 3 PINPin Count: 3HTS Code: 8541.30.00.80Manufacturer: Vishay IntertechnologiesRisk Rank: 5.12Additional Feature: HIGH SPEEDCircuit Commutated Turn-off Time-Nom: 15 µsConfiguration: SINGLEDC Gate Trigger Current-Max: 200 mADC Gate Trigger Voltage-Max: 3 VHolding Current-Max: 600 mAJEDEC-95 Code: TO-209AEJESD-30 Code: O-XUPM-H3Leakage Current-Max: 50 mANon-Repetitive Pk On-state Cur: 11000 ANumber of Elements: 1Number of Terminals: 3On-state Current-Max: 330000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: UNSPECIFIEDPackage Shape: ROUNDPackage Style: POST/STUD MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDQualification Status: Not QualifiedRMS On-state Current-Max: 518 ARepetitive Peak Off-state Voltage: 400 VRepetitive Peak Reverse Voltage: 400 VSubcategory: Silicon Controlled RectifiersSurface Mount: NOTerminal Form: HIGH CURRENT CABLETerminal Position: UPPERTime Silicon Controlled Rectifier, 518A I(T)RMS, 330000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-209AE, TO-118, 3 PIN

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