Sell STMicroelectronics STD12NM50ND New Stock

STD12NM50ND N-channel 500 V, 0.29 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in DPAK package; STD12NM50ND
  • Part Number:    

    STD12NM50ND

  • Category:    

    Discrete Semiconductor

  • Manufacturer:    

    STMicroelectronics

  • Packaging:    

  • Data Code:    

    Lead free / RoHS Compliant

  • Qty Available:    

    2590

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Datasheets:STx12NM50NDProduct Photos:TO-263Other Related Documents:STD12NM50ND View All SpecificationsStandard Package:2,500Category:Discrete Semiconductor ProductsFamily:FETs - SingleSeries:FDmesh™Packaging:Tape & Reel (TR)FET Type:MOSFET N-Channel, Metal OxideFET Feature:StandardDrain to Source Voltage (Vdss):500VCurrent - Continuous Drain (Id) @ 25° C:11A (Tc)Rds On (Max) @ Id, Vgs:380 mOhm @ 5.5A, 10VVgs(th) (Max) @ Id:5V @ 250µAGate Charge (Qg) @ Vgs:30nC @ 10VInput Capacitance (Ciss) @ Vds:850pF @ 50VPower - Max:100WMounting Type:Surface MountPackage / Case:TO-252-3, DPak (2 Leads + Tab), SC-63Supplier Device Package:D-PakDynamic Catalog:N-Channel Standard FETsOther Names:497-10020-2
STMicroelectronics STD12NM50ND New N-channel 500 V, 0.29 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in DPAK package, STD12NM50ND pictures, STD12NM50ND price, STD12NM50ND supplier
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Manufacturer Part Number: STD12NM50ND
Brand Name: STMicroelectronics
Rohs Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: STMICROELECTRONICS
Part Package Code: TO-252AA
Package Description: SMALL OUTLINE, R-PSSO-G2
Pin Count: 3
ECCN Code: EAR99
Manufacturer: STMicroelectronics
Risk Rank: 7.95
Avalanche Energy Rating (Eas): 350 mJ
Case Connection: DRAIN
Configuration: SINGLE
DS Breakdown Voltage-Min: 500 V
Drain Current-Max (Abs) (ID): 11 A
Drain Current-Max (ID): 11 A
Drain-source On Resistance-Max: 0.38 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code: TO-252AA
JESD-30 Code: R-PSSO-G2
JESD-609 Code: e3
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 2
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): 260
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 100 W
Pulsed Drain Current-Max (IDM): 44 A
Qualification Status: Not Qualified
Subcategory: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
Terminal Form: GULL WING
Terminal Position: SINGLE
Time
N-channel 500 V, 0.29 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in DPAK package

Shunlongwei Inspected every STD12NM50ND before Ship, All STD12NM50ND with 6 months warranty.

Shunlongwei Co. Ltd.

Contact: Alice Peng

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E-mail: sales@shunlongwei.com

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