Content last revised on May 1, 2023
Manufacturer Part Number: STD12NM50NDBrand Name: STMicroelectronicsRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: STMICROELECTRONICSPart Package Code: TO-252AAPackage Description: SMALL OUTLINE, R-PSSO-G2Pin Count: 3ECCN Code: EAR99Manufacturer: STMicroelectronicsRisk Rank: 7.95Avalanche Energy Rating (Eas): 350 mJCase Connection: DRAINConfiguration: SINGLEDS Breakdown Voltage-Min: 500 VDrain Current-Max (Abs) (ID): 11 ADrain Current-Max (ID): 11 ADrain-source On Resistance-Max: 0.38 ΩFET Technology: METAL-OXIDE semiconductorJEDEC-95 Code: TO-252AAJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 100 WPulsed Drain Current-Max (IDM): 44 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn) - annealedTerminal Form: GULL WINGTerminal Position: SINGLETime N-channel 500 V, 0.29 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in DPAK package