STPSC12H065CT DescriptionThe SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimized capacitive charge at turn-off behavior is independent of temperature.Especially suited for use in interleaved or bridge-less topologies, this dual-diode rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
Features
●No or negligible reverse recovery
●Switching behavior independent of temperature
●High forward surge capability
●ECOPACK82 compliant component
Absolute ratings (limiting values per diode at 25 °C unless otherwise specified)
●VRRM Repetitive peak reverse voltage 650V
●IF(RMS) Forward rms current 22A
●IF(AV)Average forward current Per diode 6A
●IF(AV)Average forward current Per device 12A
●Tstg Storage temperature range -65 to +175 °C
●Tj Operating junction temperature(3) -40 to +175 °C
