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M/A-Com Technology Solutions UF28100H

  • UF28100H

UF28100H RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4; UF28100H

· Categories: IGBT
· Manufacturer: M/A-Com Technology Solutions
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 1325
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Content last revised on August 11, 2023

Manufacturer Part Number: UF28100HPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: M/A-COM TECHNOLOGY SOLUTIONS INCPackage Description: FLANGE MOUNT, R-CDFM-F4Pin Count: 4ECCN Code: EAR99HTS Code: 8541.29.00.75Manufacturer: MACOMRisk Rank: 5.16Case Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 65 VDrain Current-Max (ID): 12 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: ULTRA HIGH FREQUENCY BANDJESD-30 Code: R-CDFM-F4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: YESTerminal Form: FLATTerminal Position: DUALTime RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4