#Fuji, #1DI200E_055, #IGBT_Module, #IGBT, 1DI200E-055 Power Bipolar Transistor, 200A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 11 Pin, M207, 11
Manufacturer Part Number: 1DI200E-055Part Life Cycle Code: ObsoleteIhs Manufacturer: COLLMER SEMICONDUCTOR INCPackage Description: FLANGE MOUNT, R-PUFM-X11Pin Count: 11Manufacturer: Fuji Electric Co LtdRisk Rank: 5.84Collector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 600 VConfiguration: DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 70JESD-30 Code: R-PUFM-X11Number of Elements: 1Number of Terminals: 11Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Bipolar Transistor, 200A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 11 Pin, M207, 11 PIN