#Fuji, #7MBR50SB_120_50, #IGBT_Module, #IGBT, 7MBR50SB-120-50 IGBT Array & Module Transistor SEMITRANS N Channel 75 A 2.7 V 360 W 1.2 kV;
Collector Emitter Saturation Voltage Vce(on): 2.7V
Collector Emitter Voltage V(br)ceo: 1.2kV
DC Collector Current: 75A
No. of Pins: 24
Operating Temperature Max: 150°C
Power Dissipation Pd: 360W
SVHC: To Be Advised
Transistor Case Style: Module
Transistor Polarity: N Channel
IGBT Array & Module Transistor SEMITRANS N Channel 75 A 2.7 V 360 W 1.2 kV