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Fuji 2MBI200TA-060-01 IGBT Module

Fuji 2MBI200TA-060-01: A robust 600V/200A half-bridge IGBT module. Leveraging proven NPT technology for superior durability and fault tolerance in demanding industrial applications.

· Categories: IGBT Module
· Manufacturer: Fuji
· Price: US$ 45
· Date Code: 2021+
. Available Qty: 575
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2MBI200TA-060-01 Specification

Fuji 2MBI200TA-060-01 | A Rugged 600V/200A IGBT Module for High-Reliability Power Conversion

The Fuji 2MBI200TA-060-01 is an established and highly reliable 2-in-1 (half-bridge) IGBT module designed for demanding power control applications. As a cornerstone component in Fuji Electric's portfolio, this module is engineered not for bleeding-edge switching speeds, but for exceptional durability and operational robustness. It represents a class of IGBT modules where predictable performance and resilience in harsh electrical environments are the primary design objectives, making it a trusted choice for systems requiring long service life and fault tolerance.

Product Highlights:

  • Robust Power Rating: Features a half-bridge configuration with a 600V collector-emitter voltage (Vces) and a 200A continuous collector current (Ic), providing substantial power handling for industrial-grade equipment.
  • Proven NPT Technology: Utilizes Non-Punch-Through (NPT) IGBT chip technology, which is renowned for its wide Safe Operating Area (SOA) and superior short-circuit withstand capability.
  • Optimized for Low-Frequency Operation: Engineered for maximum efficiency and reliability in applications operating at low to medium switching frequencies (typically below 20 kHz), such as motor control and welding.
  • Industry-Standard Packaging: Housed in the M229 package, ensuring straightforward mechanical integration, thermal management, and compatibility with existing designs for easy retrofitting or replacement.

Key Technical Specifications

For engineers requiring a quick data reference, the table below outlines the critical electrical and thermal characteristics of the 2MBI200TA-060-01. For a comprehensive list of parameters, you can download the full 2MBI200TA-060-01 datasheet.

ParameterValue
Collector-Emitter Voltage (Vces)600 V
Continuous Collector Current (Ic) @ Tc=80°C200 A
Collector-Emitter Saturation Voltage (Vce(sat)) typ. @ Ic=200A2.2 V
Gate-Emitter Threshold Voltage (Vge(th))5.0V to 8.0V
Thermal Resistance, Junction to Case (Rth(j-c)) per IGBT0.18 °C/W
Package TypeM229

Application Scenarios & Engineering Value

The true value of the Fuji 2MBI200TA-060-01 is demonstrated in its performance within specific industrial applications where reliability trumps all other metrics.

  • Industrial Motor Drives: In Variable Frequency Drives (VFDs), the module's excellent short-circuit ruggedness provides a critical safety margin, protecting the inverter stage from motor faults or sudden load changes. Its robust thermal performance ensures stable operation during prolonged, high-torque conditions.
  • Welding Power Supplies: The high current capability and thermal stability are perfectly suited for the pulsed, high-power demands of arc welding systems. The module can reliably handle the repetitive stress of striking and maintaining an arc without degradation.
  • Uninterruptible Power Supplies (UPS): For mission-critical backup power, reliability is non-negotiable. The proven design and durable NPT die of the 2MBI200TA-060-01 contribute to the long-term dependability required to prevent costly downtime. Preventing catastrophic IGBT failures is paramount in these systems.

A Technical Deep Dive: The Enduring Merit of NPT Technology

While modern power electronics often focus on Trench and Field-Stop (FS) technologies to minimize conduction losses, the NPT technology inside the 2MBI200TA-060-01 offers a different, strategically important set of advantages. NPT IGBTs inherently possess a wider, more forgiving Safe Operating Area (SOA). This is because the electric field is distributed more uniformly across the device's drift region. The practical benefit for a design engineer is a device that is significantly more tolerant of over-voltage and over-current conditions that can occur during fault events. This inherent toughness often simplifies the design and cost of external snubber and protection circuitry, making the overall system more robust and cost-effective for certain applications.

Frequently Asked Questions (FAQ)

1. Is the 2MBI200TA-060-01 suitable for high-frequency designs like solar inverters or modern EV traction inverters?

No, this module is not the ideal choice for high-frequency applications. NPT technology, while rugged, exhibits higher switching losses (Eon and Eoff) compared to modern Trench-FS IGBTs. It is optimized for frequencies generally below 20 kHz. For applications requiring higher switching speeds to reduce the size of magnetics, we recommend exploring modules based on Fuji's latest X-Series or other advanced Trench Gate technologies.

2. What are the essential gate drive considerations for this module?

A robust gate drive is critical for ensuring reliability. We recommend a split power supply providing a positive voltage of +15V for turn-on and a negative voltage between -5V and -15V for turn-off. The negative voltage ensures the gate is held firmly off, preventing parasitic turn-on caused by Miller capacitance (dv/dt), especially important in a half-bridge topology. For more in-depth guidance, review these practical tips for robust IGBT gate drive design or contact our technical team for application-specific support.

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