#EUPEC, #BSM200GA170DN2S, #IGBT_Module, #IGBT, BSM200GA170DN2S Insulated Gate Bipolar Transistor, 290A I(C), 1700V V(BR)CES; BSM200GA170DN2S
Manufacturer Part Number: BSM200GA170DN2SPbfree Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.78Collector Current-Max (IC): 290 ACollector-Emitter Voltage-Max: 1700 VGate-Emitter Voltage-Max: 20 VNumber of Elements: 1Operating Temperature-Max: 150 °CPower Dissipation-Max (Abs): 1750 WSubcategory: Insulated Gate BIP TransistorsVCEsat-Max: 3.9 V Insulated Gate Bipolar Transistor, 290A I(C), 1700V V(BR)CES