#MITSUBISHI, #CM1200HB_50H, #IGBT_Module, #IGBT, CM1200HB-50H Insulated Gate Bipolar Transistor, 1200A I(C), 2500V V(BR)CES, N-Channel,; CM1200HB-50H
Manufacturer Part Number: CM1200HB-50HPbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-XUFM-X9Manufacturer: Mitsubishi ElectricRisk Rank: 5.21Case Connection: ISOLATEDCollector Current-Max (IC): 1200 ACollector-Emitter Voltage-Max: 2500 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X9Number of Elements: 3Number of Terminals: 9Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 15630 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 1200A I(C), 2500V V(BR)CES, N-Channel,