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IXYS IXXN100N60B3H1

  • IXXN100N60B3H1

IXXN100N60B3H1 Insulated Gate Bipolar Transistor, 170A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4

· Categories: IGBT
· Manufacturer: IXYS
· Price: US$ 15 In-Stock Offer
· Date Code: Please Verify on Quote
. Available Qty: 980
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Content last revised on March 20, 2024

Manufacturer Part Number: IXXN100N60B3H1
Rohs Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: IXYS CORP
Package Description: FLANGE MOUNT, R-PUFM-X4
Pin Count: 4
Manufacturer: IXYS Corporation
Risk Rank: 2.31
Additional Feature: AVALANCHE RATED, UL RECOGNIZED
Case Connection: ISOLATED
Collector Current-Max (IC): 170 A
Collector-Emitter Voltage-Max: 600 V
Configuration: SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-PUFM-X4
Number of Elements: 1
Number of Terminals: 4
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 500 W
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Application: POWER CONTROL
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 350 ns
Turn-on Time-Nom (ton): 92 ns
VCEsat-Max: 5.5 V
Insulated Gate Bipolar Transistor, 170A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4

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