Fairchild Semiconductor FDMS3606AS IGBT Module

Manufacturer Part Number: FDMS3606ASBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: FLATPACK, R-PQFP-N7Manufacturer Package Code: 483AJECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 0.9Case Connection: DRAIN SOURCEConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 40 ADrain Current-Max (ID): 1.3 ADrain-source On Resistance-Max: 0.008 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 75 pFJESD-30 Code: R-PQFP-N7JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 7Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLATPACKPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2.5 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: NO LEADTerminal Position: QUADTime 30V Asymmetric Dual N-Channel MOSFET, PowerTrench® Power Stage, 3000-REEL