CM200RXL1-12A Mitsubishi 600V 200A CIB IGBT Module

Content last revised on January 16, 2026

Mitsubishi CM200RXL1-12A | High-Efficiency 600V Dual IGBT for Dynamic Motor Control

The Mitsubishi CM200RXL1-12A is a 600V, 200A dual IGBT module engineered for high-performance power conversion systems where efficiency and reliability are non-negotiable. Leveraging Mitsubishi's advanced 6th generation CSTBT™ (Carrier Stored Trench-Gate Bipolar Transistor) technology, this module provides an optimal balance between low conduction losses and fast switching characteristics, making it a cornerstone component for demanding industrial applications.

• Voltage/Current Rating: 600V / 200A, providing robust performance for low-to-medium voltage inverters.
• Configuration: Dual (Half-Bridge) configuration in a standard package, simplifying inverter topology design.
• Core Technology: Features advanced CSTBT™ chip technology for reduced saturation voltage (VCE(sat)) and minimized switching losses.
• Key Applications: Ideally suited for industrial motor drives, welding power supplies, servo amplifiers, and uninterruptible power supplies (UPS).

Key Parameter Overview

For engineers requiring quick access to critical performance data, the following table summarizes the standout specifications of the CM200RXL1-12A. These figures underscore its suitability for high-efficiency designs.

Technical Deep Dive: Engineering for Performance and Reliability

The exceptional performance of the CM200RXL1-12A stems from Mitsubishi's focused engineering on both the silicon and package levels. The core of this module is the 6th generation Mitsubishi CSTBT™ chip. This trench-gate structure incorporates a carrier-stored layer, which significantly reduces the collector-emitter saturation voltage (VCE(sat)) without a proportional increase in turn-off switching loss. For a design engineer, this directly translates to lower conduction losses, especially in high-duty-cycle applications like industrial motor control, leading to reduced heat generation and a smaller heatsink requirement.

Furthermore, the module's construction is optimized for superior thermal performance. The low thermal resistance (Rth(j-c)) ensures efficient heat transfer from the IGBT junction to the case, maintaining lower operating temperatures. This not only enhances the module's power cycling capability and overall lifetime but also provides a wider thermal margin, increasing system robustness against overload conditions.

Optimized Performance in Demanding Applications

The specific characteristics of the Mitsubishi CM200RXL1-12A make it a strategic choice for several key power electronic systems:

• Industrial Motor Drives: In Variable Frequency Drives (VFDs), the low Vce(sat) minimizes power loss during the motor's run state, directly improving wall-plug efficiency. Its fast and soft-switching recovery diode reduces EMI, simplifying filter design and system integration.
• Welding Power Supplies: The module's robust Safe Operating Area (SOA) and excellent short-circuit withstand time are critical for enduring the harsh, transient-heavy electrical environment of arc welding applications, preventing catastrophic failure.
• Servo Drives: Precision and dynamic response are paramount in robotics and CNC machines. The fast switching speed of this IGBT module allows for higher PWM frequencies, enabling smoother current control and improved motor torque ripple. For a detailed look at this application, explore our guide on the role of IGBTs in robotic servo drives.

Design & Implementation FAQ for the CM200RXL1-12A

Drawing from our experience, here are answers to common questions from engineers implementing this module:

• What is the recommended gate drive voltage?For optimal performance, a +15V turn-on and a -10V to -15V turn-off voltage is recommended. Using a negative gate voltage ensures a strong turn-off, preventing parasitic turn-on due to the Miller effect, especially during high dv/dt conditions.
• Can these modules be paralleled for higher current?Yes, the CM200RXL1-12A is suitable for paralleling. Its positive temperature coefficient of Vce(sat) helps ensure thermal stability and current sharing among parallel modules. However, careful PCB layout, including symmetrical gate drive paths and power connections, is essential to minimize stray inductance and ensure balanced dynamic performance.
• Is an external snubber circuit required?In many well-designed layouts, a snubber circuit may not be necessary due to the soft-recovery characteristics of the internal freewheeling diode. However, for applications with high bus voltage or significant parasitic inductance in the DC link, a small R-C or RCD snubber across the module can help suppress voltage overshoots during turn-off, further enhancing reliability.

For more complex design challenges or to discuss your specific application needs, please contact our technical team for expert consultation.