QM200DY-H Mitsubishi 600V 200A IGBT Module

QM200DY-H IGBT Module In-stock / Mitsubishi: 600V 200A. High-speed switching. 90-day warranty, AC motor control. Global fast shipping. Get quote.

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· Manufacturer: Mitsubishi
· Price: US$ 35
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Content last revised on February 2, 2026

QM200DY-H | 600V 200A Dual IGBT Module for Industrial Drives

Product Overview: Reliability and Simplified Thermal Design

The QM200DY-H is a robust dual IGBT module engineered for high reliability and simplified thermal management in demanding industrial power systems. Featuring core specifications of 600V | 200A | VCE(sat) 2.7V (max), this component delivers two key engineering benefits: an electrically isolated base for streamlined assembly and a standardized industrial package for mechanical compatibility. Its integrated isolation allows direct mounting to a common heatsink, simplifying the construction of multi-module systems like Variable Frequency Drives (VFDs). For 200-240V line-powered motor drives up to approximately 50kW requiring proven reliability, the QM200DY-H provides a robust and cost-effective power stage.

Application Scenarios & Value

System-Level Reliability in Motor Drives and Welding Applications

The QM200DY-H is a proven workhorse for high-current power conversion, primarily deployed in the power stages of industrial motor controls and welding power supplies. Its 600V blocking voltage provides a secure design margin for systems operating on 200V-240V AC lines, while its 200A continuous collector current rating enables precise control of multi-kilowatt loads.

Consider the engineering challenge in a three-phase VFD: managing the thermal load of six individual IGBTs in a compact industrial enclosure. The QM200DY-H directly solves this by incorporating an electrically isolated mounting base. This feature allows three modules (one for each phase) to be mounted on a single, grounded heatsink without the need for costly and thermally inefficient insulating pads. This not only simplifies the mechanical design and assembly process but also enhances long-term system reliability by eliminating a potential point of failure associated with external insulators. The result is a more robust, cost-effective, and easier-to-manufacture power conversion system.

While the QM200DY-H is optimized for 600V systems, applications requiring operation on higher voltage lines may consider the related CM200DY-24H, which offers a 1200V rating. For lower power requirements, the QM150DY-H provides a 150A alternative in a similar package.

Key Parameter Overview

Decoding Key Specifications for Effective Thermal Design

The performance of the QM200DY-H is defined by its electrical and thermal characteristics. The following table highlights the critical parameters that engineers must consider for system design and simulation. A low collector-emitter saturation voltage (VCE(sat)) is crucial as it directly determines conduction losses, while the thermal resistance dictates how efficiently heat can be extracted from the device.

Parameter Symbol Value Conditions
Collector-Emitter Voltage VCES 600 V VGE = 0V
Gate-Emitter Voltage VGES ±20 V
Collector Current (DC) IC 200 A Tc = 25°C
Collector Current (Pulse) ICP 400 A
Collector-Emitter Saturation Voltage VCE(sat) 2.7 V (Max) IC = 200A, VGE = 15V
Total Power Dissipation Pc 780 W Tc = 25°C
Thermal Resistance (Junction-to-Case) Rth(j-c) 0.16 °C/W IGBT per module
Isolation Voltage Viso 2500 Vrms AC, 1 minute

Download the QM200DY-H datasheet for detailed specifications and performance curves.

Technical Deep Dive

Analyzing the Thermally-Efficient Isolated Base Design

A critical, yet often overlooked, feature of the QM200DY-H is its construction. The module utilizes an Alumina (Al2O3) ceramic substrate bonded directly to a copper baseplate. This integrated design is fundamental to the module's value proposition, delivering both high dielectric strength for electrical safety and a direct, efficient path for thermal dissipation.

This construction provides a significant advantage over non-isolated modules, which require a separate thermal interface material (TIM) like a mica or silicone pad for isolation. Using a module with an integrated isolated base is akin to having a perfectly flat, factory-applied protective coating. It ensures a consistent, void-free interface between the active semiconductor and the heatsink. In contrast, applying a separate insulating pad is like installing a screen protector on a phone—any trapped air, dust, or uneven mounting pressure can create thermal "hotspots," compromising heat transfer and degrading the system's long-term operational reliability. By eliminating this variable, the QM200DY-H contributes to more predictable Thermal Management and a more robust final product. For more information on device selection, see this in-depth analysis of IGBT modules.

Frequently Asked Questions (FAQ)

Engineering Q&A: Performance and Integration Insights

What is the primary benefit of the isolated mounting base on the QM200DY-H?
The key benefit is simplified system assembly and enhanced reliability. It allows multiple modules to be mounted on a single, common heatsink without needing external insulating pads. This reduces mechanical complexity, lowers assembly costs, and eliminates the risk of inconsistent thermal performance or dielectric breakdown associated with separate insulators.

How does the maximum VCE(sat) of 2.7V impact system design for this 200A module?
The VCE(sat) value is critical for calculating conduction losses (Power Loss = VCE(sat) x IC). At 200A, a VCE(sat) of 2.7V results in approximately 540W of heat generated during conduction. Engineers must use this worst-case value to size the heatsink appropriately, ensuring the junction temperature remains within the safe operating area under all load conditions. For a deeper dive into potential issues, read about IGBT failure analysis.

Is a negative gate voltage required for turning off the QM200DY-H?
While the datasheet specifies characteristics with a 0V turn-off (VGE = 0V), using a small negative gate voltage (e.g., -5V to -15V) is a common best practice in industrial applications. This provides a greater noise margin, preventing spurious turn-on caused by Miller capacitance (dV/dt) effects, which is especially important in noisy environments like those found in Variable Frequency Drive (VFD) systems.

Can the QM200DY-H be used in parallel to achieve higher current output?
Paralleling IGBT modules is possible but requires careful design considerations to ensure proper current sharing. This includes symmetrical PCB layout for gate drive signals, separate gate resistors for each module, and careful thermal management to keep the modules at similar temperatures. Mismatches can lead to one module carrying a disproportionate share of the current, potentially leading to premature failure. For detailed guidance, it is essential to consult application notes from the manufacturer, such as Mitsubishi.

Strategic Outlook

The QM200DY-H represents a class of power electronics components that form the backbone of modern industrial automation. While newer technologies focus on higher switching frequencies and lower losses, the value of this module lies in its proven track record, robustness, and ease of implementation. For engineers tasked with designing or maintaining high-power motor drives, welding systems, and general-purpose inverters, the QM200DY-H offers a dependable and well-understood solution that balances performance, cost, and long-term reliability.

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