CM75TF-28H Mitsubishi 1400V 75A Dual IGBT Module

Content last revised on December 16, 2025

CM75TF-28H: A 1400V, 75A Dual IGBT Module Engineered for High-Efficiency Power Conversion

Product Introduction and Key Highlights

Optimizing Performance in Medium-Power Industrial Systems

The Mitsubishi CM75TF-28H is a high-power IGBT module engineered for demanding switching applications. It integrates two IGBTs in a half-bridge configuration, delivering a robust 1400V collector-emitter voltage and a 75A continuous collector current. Key benefits include low saturation voltage (VCE(sat)) and integrated free-wheeling diodes, enabling superior efficiency and simplified thermal management. This module is specifically designed to minimize power losses, making it a critical component for enhancing the performance and reliability of modern power conversion systems. For medium-power industrial drives where minimizing both switching and conduction losses is a primary design objective, this H-Series module provides a highly effective solution.

Application Scenarios & Value

Achieving System-Level Benefits in Motor Drives and Power Supplies

The CM75TF-28H is an excellent fit for a range of medium-power industrial applications where efficiency and reliability are paramount. Its architecture is particularly advantageous in systems like AC motor controls, motion/servo controls, uninterruptible power supplies (UPS), and welding power supplies.

Consider its use in a Variable Frequency Drive (VFD) for a 50kW industrial motor. In this scenario, the module's low collector-emitter saturation voltage (VCE(sat)) of 3.3V (typical) becomes a decisive factor. This low saturation voltage directly translates to lower conduction losses during operation. For a design engineer, this means less waste heat is generated by the IGBT, which in turn allows for the use of smaller, more cost-effective heatsinks and potentially a more compact overall system design. The reduction in thermal load not only improves system efficiency but also enhances long-term reliability by keeping junction temperatures lower, a core principle detailed in guides on mastering IGBT thermal management. Furthermore, the module's integrated super-fast recovery free-wheel diodes provide robust performance during inductive load switching, which is essential for motor control.

While the CM75TF-28H is optimized for 75A applications, for systems requiring higher current handling capabilities within a similar package, the CM150DY-24H offers a higher current rating, providing a scalable design path.

Key Parameter Overview

Decoding the Specs for Enhanced Switching Performance

The technical specifications of the CM75TF-28H are foundational to its performance in high-power applications. The table below highlights the critical parameters that enable its efficiency and robustness. Each value is derived from the official datasheet to ensure accuracy for engineering evaluation.

Download the CM75TF-28H datasheet for detailed specifications and performance curves.

Technical Deep Dive

Inside the H-Series: A Focus on Low-Loss Technology

The CM75TF-28H is part of Mitsubishi's H-Series, which emphasizes reducing power losses. A key contributor to this is the optimization of the IGBT's internal structure, likely employing an advanced trench-gate design. This technology, such as Mitsubishi's CSTBT™ (Carrier Stored Trench Bipolar Transistor), is engineered to lower the on-state resistance. Think of it like widening a pipe to allow more water to flow with less pressure; the trench structure creates a wider path for current, which directly reduces the voltage drop across the device, VCE(sat). A lower VCE(sat) means less power is converted into heat during the conduction phase, a crucial aspect of power semiconductor selection.

This focus on reducing static losses is balanced with dynamic performance. The module includes discrete super-fast recovery free-wheel diodes that are co-packaged with the IGBTs. This ensures rapid turn-off of the diode and minimizes reverse recovery losses, which are significant in high-frequency switching applications like those found in modern Variable Frequency Drive (VFD) systems. This integrated, performance-matched approach simplifies the design process for engineers, who would otherwise need to select and validate a separate diode.

Frequently Asked Questions (FAQ)

What is the primary advantage of the CM75TF-28H being an H-Series module?

As an H-Series module, its design is centered on minimizing power dissipation. This is primarily achieved through a low collector-emitter saturation voltage (VCE(sat)), which reduces conduction losses and, consequently, the thermal management requirements for the system.

How does the 1400V VCES rating benefit my design?

The 1400V collector-emitter voltage provides a substantial safety margin for applications operating on high-voltage DC buses, such as those derived from 480V or 575V AC lines. This high breakdown voltage enhances the system's robustness against voltage transients and spikes, improving overall reliability.

Is an NTC thermistor included in this module?

Based on the available official datasheets, the CM75TF-28H does not integrate an NTC thermistor for temperature monitoring. Engineers requiring precise thermal feedback would need to implement an external temperature sensing solution on or near the module's baseplate.

This strategic approach to power module design ensures that systems built around the CM75TF-28H can achieve higher efficiency ratings and greater long-term reliability, aligning with industry demands for more sustainable and cost-effective power solutions. By balancing low-loss characteristics with robust operational parameters, the module provides a solid foundation for next-generation industrial power electronics.