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QM150DY-H,
# Mitsubishi #QM150DY-H New Stock, QM150DY-H IGBT Power Transistor Modules 150A/600V/GTR/2U;, #IGBT_Module, #IGBT, #QM150DY_H
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IGBT Power Transistor Modules 150A/600V/GTR/2U QM150DY-H
• Part Number: QM150DY-H
• IC Collector current ........................ 150A
• VCEX Collector-emitter voltage ........... 600V
• hFE DC current gain............................... 75
• Insulated Type
• UL Recognized
• Collector dissipation TC=25°C........ 690W
• Junction temperature Tj ...................+150°C
• Storage temperature Tstg..............-40 to +125°C
• Mounting screw torque ....................3.0 *1 N·m
• Typical value Weight .....................420g
IGBT Power Transistor Modules 150A/600V/GTR/2U
