Mitsubishi RM100DZ-H | High-Reliability 1200V Dual IGBT Module
The Mitsubishi **RM100DZ-H** is a 1200V, 100A dual IGBT module engineered for demanding power conversion applications. Housed in a standard industrial package, this module integrates two IGBTs in a half-bridge topology, providing a robust and efficient building block for three-phase inverters, motor drives, and high-power switching systems. It is specifically designed for designers who prioritize proven reliability and optimal conduction performance over ultra-high frequency switching.
Technical Deep Dive: The Core of the RM100DZ-H
CSTBT™ for Superior Conduction Performance
At the heart of the **RM100DZ-H** lies Mitsubishi Electric's proprietary Carrier Stored Trench-gate Bipolar Transistor (CSTBT™) technology. Unlike conventional trench-gate IGBTs, this structure introduces a carrier-stored layer to reduce the collector-emitter saturation voltage (Vce(sat)) dramatically. For the system designer, this translates directly to:
- Reduced Conduction Losses: Lower Vce(sat) means less power is dissipated as heat during the on-state, significantly improving the overall efficiency of your inverter or motor drive.
- Simplified Thermal Management: With less heat generated, designers can specify smaller, lighter, and more cost-effective heatsinks, or push for higher power density in the same thermal envelope. Effective IGBT thermal management is simplified.
Robust Construction for Industrial Longevity
The **RM100DZ-H** is built to withstand the rigors of industrial environments. Its construction features an electrically isolated baseplate, which simplifies mounting procedures and enhances system safety by isolating the power circuit from the heatsink. This design ensures high thermal conductivity for efficient heat removal while maintaining excellent voltage isolation, making it a dependable component for systems requiring a long operational lifespan and minimal maintenance.
Multi-Dimensional Application Scenarios & Value
- Industrial Motor Drives: In applications like VFDs and servo controllers, the low Vce(sat) of the **RM100DZ-H** leads to higher drive efficiency and reduced heat in the control cabinet. The robust package ensures reliable operation even with the mechanical vibration and thermal cycling common in factory automation. For more insights, explore this article on IGBTs for motor drives.
- Uninterruptible Power Supplies (UPS): System uptime is non-negotiable in a UPS. The proven reliability of this Mitsubishi IGBT module ensures the power conversion stage operates dependably. Its high efficiency minimizes energy waste during both charging and discharging cycles, extending battery life and reducing operating costs.
- Welding Equipment: Welders require components that can handle high-current pulses and rapid thermal changes. The module’s excellent thermal stability and high current rating provide the consistent power delivery needed for stable arcs and high-quality welds.
- Solar & Renewable Energy Inverters: While newer technologies are emerging, the cost-effectiveness and ruggedness of the **RM100DZ-H** make it a strong candidate for large-scale solar inverters where proven performance and system cost are key decision factors.
Key Technical Parameters of the RM100DZ-H
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (V_CES) | 1200 V |
| Collector Current (I_C) | 100 A |
| Collector-Emitter Saturation Voltage (V_CE(sat)) (Typ. @ I_C=100A) | 2.2 V |
| Power Dissipation (P_C) per element | 520 W |
Frequently Asked Questions (FAQ)
- What is the primary advantage of the dual (half-bridge) configuration?
The dual configuration integrates one phase-leg of a three-phase inverter into a single module. Using three **RM100DZ-H** modules simplifies the power stage layout, reduces parasitic inductance associated with long bus bars, and minimizes the overall component count compared to using six individual discrete IGBTs.
- Is this module suitable for high-frequency applications?
The **RM100DZ-H** is optimized for low conduction losses, making it ideal for applications operating at low-to-medium switching frequencies (typically up to 15-20 kHz). For applications requiring significantly higher frequencies, newer generation modules or SiC devices might be more suitable. However, for mainstream motor drives and UPS systems, its performance is a perfect fit.
For systems that demand a balance of proven reliability and strong electrical performance, the Mitsubishi **RM100DZ-H** remains a strategic and cost-effective choice. If your design prioritizes robustness and efficiency in mainstream power conversion, this module delivers exceptional value. Explore More IGBT Modules in our catalog or Contact Us for a Quote to discuss your specific application needs.
