CM150MXL-24S Mitsubishi 1200V 150A 6th Gen CSTBT CIB IGBT Module

CM150MXL-24S IGBT Module In-stock / Mitsubishi: 1200V 150A 6th Gen CSTBT. Integrated CIB topology for VFDs. 90-day warranty. Fast shipping. Get quote.

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· Manufacturer: Mitsubishi
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Content last revised on February 2, 2026

Mitsubishi CM150MXL-24S: High-Efficiency 1200V 150A 6th Gen CSTBT™ CIB Module

The Mitsubishi CM150MXL-24S represents a sophisticated integration of power electronics, combining a three-phase converter, a three-phase inverter, and a brake chopper into a single, compact NX-type package. By utilizing Mitsubishi’s proprietary 6th Generation CSTBT™ (Carrier Stored Trench-Gate Bipolar Transistor) technology, this module is specifically engineered to reduce power dissipation and enhance thermal performance in demanding industrial environments. For engineers designing compact motor control systems, the CM150MXL-24S serves as a high-density solution that simplifies layout complexity while maintaining superior switching characteristics.

What makes the CM150MXL-24S ideal for space-constrained industrial drives? Its fully integrated CIB (Converter-Inverter-Brake) topology significantly reduces the PCB footprint while the 6th Gen CSTBT™ chip architecture minimizes thermal losses during high-frequency switching. For compact 400V class industrial motor drives prioritizing thermal margin and high efficiency, this 150A 1200V module provides the optimal balance of power density and long-term reliability.

Key Parameter Overview

Decoding the Specs for Enhanced Switching Performance

The following technical specifications are derived from official Mitsubishi Electric documentation. This data provides the baseline for thermal and electrical stress evaluations during the system design phase.

Inverter & Brake Section Converter Section
Collector-Emitter Voltage (Vces) 1200V Repetitive Peak Reverse Voltage (Vrrm) 1600V
Collector Current (Ic) 150A Average Rectified Current (Io) 150A
Vce(sat) (Typical at Tj=125°C) 2.2V Forward Voltage (Vf) (Typical) 1.3V
Short Circuit Withstand Time (Tsc) 10μs Surge Forward Current (Ifsm) 1350A

Download the CM150MXL-24S datasheet for detailed specifications and performance curves.

A critical metric for designers is the Collector-Emitter Saturation Voltage (Vce(sat)). In the CM150MXL-24S, the 2.2V rating at operating temperature signifies reduced conduction losses. Think of Vce(sat) like the friction in a water pipe: a lower value means less energy is wasted as heat as the current flows through the "pipe," allowing for a more efficient transfer of power to the motor.

Application Scenarios & Value

Achieving System-Level Benefits in High-Frequency Power Conversion

The primary value proposition of the CM150MXL-24S lies in its 7-pack configuration, which integrates 1200V IGBTs and FWDs (Free Wheeling Diodes) to handle the complete power conversion cycle. This integration is vital for applications like Variable Frequency Drive (VFD) systems and Servo Drive units where space is at a premium.

In a high-fidelity engineering scenario, consider the design of an automated industrial conveyor system. The motor drive must handle frequent start-stop cycles, which induce significant surge currents and thermal stress. The CM150MXL-24S, with its 10μs short-circuit withstand time and 150A current handling, allows engineers to design robust Gate Drive protection circuits that can safely interrupt faults before catastrophic failure occurs. This ruggedness is a hallmark of the Mitsubishi CSTBT™ architecture.

For systems requiring alternative configurations or higher current handling, the related CM150TX-24S offers similar voltage ratings in a standard 6-pack inverter format. Furthermore, for designs focusing on even higher power density, the CM200TXPA-24T provides a 200A alternative in a refined package. By utilizing the integrated NTC thermistor in the CM150MXL-24S, designers can implement real-time Thermal Management, ensuring the module operates within its Safe Operating Area even under peak loads.

Industry Insights & Strategic Advantage

Integrating Efficiency Standards with 6th Gen CSTBT™ Technology

The global shift toward high-efficiency industrial automation is driving a need for power modules that minimize both conduction and switching losses. The CM150MXL-24S addresses this by optimizing the carrier distribution within the IGBT chip. In technical terms, the CSTBT™ structure creates a "carrier reservoir" that lowers the on-state voltage without sacrificing switching speed.

Strategically, adopting an integrated CIB module like the CM150MXL-24S aligns with IEC 61800-3 standards for industrial drives by allowing for cleaner electromagnetic layouts. Fewer external connections between the converter and inverter stages mean lower parasitic inductance, which directly contributes to reduced voltage spikes and better EMC compliance. As Renewable Energy and Smart Factory initiatives expand, the reliability of integrated modules becomes a competitive advantage, reducing the Total Cost of Ownership (TCO) through simplified assembly and increased field durability.

The Thermal Resistance (Rth) of a module can be compared to the thickness of an oven mitt. A low Rth, like that found in the NX-type package of the CM150MXL-24S, acts like a very thin, highly conductive mitt. It allows heat generated at the silicon junction to "escape" to the heatsink rapidly. This rapid thermal transfer is essential for maintaining high power density without exceeding the maximum junction temperature (Tj) of 150°C.

FAQ

How does the integrated NTC thermistor in the CM150MXL-24S simplify the inverter design?
The built-in NTC thermistor provides a direct temperature reading from the module’s baseplate. This eliminates the need for external temperature sensors and allows the Gate Drive or system controller to implement over-temperature protection dynamically, preventing IGBT failure during sustained overloads.

What is the primary benefit of the 6th Gen CSTBT technology regarding switching energy (Eon/Eoff)?
What is the primary benefit of the 6th Gen CSTBT™ technology in the CM150MXL-24S? It significantly reduces the collector-emitter saturation voltage while maintaining a narrow distribution of switching energy losses. This results in approximately 15% lower total power loss compared to 5th generation modules, allowing for higher carrier frequencies without additional cooling requirements.

As a leading distributor, we provide high-performance IGBT Modules to support your most challenging engineering projects. For detailed availability and technical support regarding Mitsubishi power solutions, please contact our team of experts.

To deepen your understanding of these technologies, we recommend exploring our Engineer's Ultimate Guide to IGBT Modules or reviewing our technical analysis on IGBT Selection for High-Frequency Designs.

Request pricing now to secure your supply of the CM150MXL-24S for your next production cycle.

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