Content last revised on May 8, 2024
Manufacturer and Model:
Mitsubishi
Model: CM150RX-24T/300G
Application:
Designed for high-power applications
Suitable for:
High power switching
Efficient power control
High voltage and current handling
Configuration and Components:
Dual-insulated gate bipolar transistor (IGBT) module
Half-bridge configuration
Includes:
Two IGBTs
Corresponding freewheeling diodes
Electrical Ratings:
Current rating: 150 Amperes
Voltage rating: 1200 Volts
Capable of handling large surge currents
Low on-state voltage drop for minimized power losses
Technology:
Built with advanced IGBT technology
Combines low conduction losses of a bipolar transistor with high switching speed of a MOSFET
Package and Protection:
Packaged in a compact and rugged module
Enhances thermal performance
Provides protection against environmental factors
Includes built-in snubber circuits to suppress voltage spikes and minimize electromagnetic interference (EMI)
