#MITSUBISHI, #CM100TF_28H, #IGBT_Module, #IGBT, CM100TF-28H Insulated Gate Bipolar Transistor, 100A I(C), 1400V V(BR)CES, N-Channel; CM100TF-28H
Manufacturer Part Number: CM100TF-28HPbfree Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-XUFM-X19Manufacturer: Mitsubishi ElectricRisk Rank: 5.92Additional Feature: SUPER FAST RECOVERYCase Connection: ISOLATEDCollector Current-Max (IC): 100 ACollector-Emitter Voltage-Max: 1400 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X19Number of Elements: 6Number of Terminals: 19Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 780 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 100A I(C), 1400V V(BR)CES, N-Channel