Content last revised on February 6, 2026
CM100DY-28H | 1400V 100A H-Series Dual IGBT Module
An Engineering Perspective on Total Loss Reduction
The Mitsubishi CM100DY-28H is a dual IGBT module from the H-Series, engineered to minimize total power losses and enhance reliability in demanding industrial inverter applications. With core specifications of 1400V, 100A, and a typical VCE(sat) of 2.2V, this module offers a compelling solution for power conversion systems requiring a significant voltage safety margin. Its primary benefit lies in reducing conduction losses, a critical factor for thermal management and overall system efficiency. The 1400V rating provides a robust safety margin for inverters operating on 575V or 600V AC lines, mitigating risks from unpredictable voltage transients without extensive protective circuitry. For industrial drives connected to 575V AC lines, the CM100DY-28H's 1400V rating offers an optimal balance of performance and voltage overhead.
Key Parameter Overview
A Specification Breakdown for Loss Calculation and Thermal Design
The technical specifications of the CM100DY-28H are tailored for high-efficiency power switching. The parameters below are essential for accurate loss modeling and thermal system design, forming the foundation for reliable inverter performance. Highlighting key metrics such as collector-emitter voltage, collector current, and thermal resistance provides a clear view of the module's capabilities in its target applications.
| Absolute Maximum Ratings (Tj = 25°C unless otherwise specified) | |
|---|---|
| Collector-Emitter Voltage (Vces) | 1400V |
| Gate-Emitter Voltage (Vges) | ±20V |
| Collector Current (Ic) @ Tc = 25°C | 100A |
| Collector Current (Icp) (1ms pulse) | 200A |
| Collector Power Dissipation (Pc) per arm @ Tc = 25°C | 540W |
| Electrical Characteristics (Tj = 125°C unless otherwise specified) | |
| Collector-Emitter Saturation Voltage (VCE(sat)) @ Ic = 100A | 2.2V (typ.), 2.7V (max.) |
| Gate-Emitter Threshold Voltage (VGE(th)) | 5.5V (typ.) |
| Thermal Resistance (Rth(j-c)) IGBT, per arm | 0.19 °C/W |
| Thermal Resistance (Rth(j-c)) Diode, per arm | 0.38 °C/W |
| Reverse Recovery Time (trr) @ Ie = 100A | 0.15 µs (typ.) |
Download the CM100DY-28H datasheet for detailed specifications and performance curves.
Application Scenarios & Value
System-Level Value in High-Voltage Industrial Motion Control
The CM100DY-28H is strategically positioned for high-power, high-voltage industrial applications where reliability is paramount. Its robust design provides tangible benefits in systems that experience harsh electrical environments. What is the main benefit of its 1400V rating? It offers enhanced system robustness against voltage spikes.
Consider the design of a Variable Frequency Drive (VFD) for a heavy-duty conveyor system in a mining operation, often powered by a 575V AC local grid. The primary engineering challenge is ensuring the drive's power stage can withstand significant voltage transients caused by grid instability and regenerative braking from the large motor. The 1400V Vces rating of the CM100DY-28H provides a critical safety margin far exceeding that of standard 1200V modules. This enhanced voltage headroom directly translates to higher long-term reliability and can reduce the complexity and cost of DC-link overvoltage protection circuits. Furthermore, the low typical VCE(sat) of 2.2V at nominal current minimizes conduction losses, simplifying the thermal management within sealed, ruggedized enclosures required for such environments. This synergy of voltage robustness and efficiency makes it an excellent component for building resilient Servo Drive and AC Motor Control systems.
For systems operating on standard 400V AC lines, the related CM100DY-24H offers a 1200V rating. For applications requiring higher current handling at 1200V, the CM200DY-24H provides a 200A capability.
Technical Deep Dive
Analyzing the VCE(sat) and 1400V Rating for Robust Performance
Two key parameters define the core engineering value of the CM100DY-28H: its collector-emitter saturation voltage (VCE(sat)) and its collector-emitter breakdown voltage (Vces). Understanding their interplay is crucial for leveraging this module effectively. The VCE(sat), specified at a typical 2.2V at 100A and 125°C, is the direct source of conduction losses. Think of it as the inherent friction within the switch when it's closed; lower friction means less energy wasted as heat. This low value is a cornerstone of the module's efficiency, directly impacting heatsink requirements and enabling higher power density.
The 1400V Vces rating, however, addresses reliability under stress. This rating acts as the device's maximum "pressure limit" for voltage. In an inverter running off a 575V AC line, the DC bus voltage is nominally around 810V. A standard 1200V IGBT provides a safety margin of approximately 48%. The CM100DY-28H elevates this margin to over 70%, offering a much more resilient defense against voltage spikes from the grid or motor-induced transients. This trade-off—accepting the physics of a slightly higher VCE(sat) inherent to higher-voltage silicon in exchange for a massive gain in voltage immunity—is a strategic choice for creating power systems that can survive in electrically noisy industrial settings. A detailed review of these specifications is essential, a process further explored in guides to decoding IGBT datasheets.
Frequently Asked Questions
How does the 1400V Vces rating of the CM100DY-28H benefit designs typically using 1200V modules?
It provides a significantly larger safety margin against voltage transients, particularly in systems running on 575V or 600V AC lines. This increased robustness enhances long-term reliability and may allow for the simplification of over-voltage protection circuits, reducing component count and system cost.
What is the practical impact of the 2.2V typical VCE(sat) on thermal management?
A low VCE(sat) directly reduces conduction power loss (P = VCE(sat) x Ic). This means less heat is generated for a given current, allowing designers to specify smaller, lighter heatsinks, improve the system's power density, or operate at higher ambient temperatures without thermal throttling.
What considerations are necessary for the gate drive design for this H-Series module?
The datasheet for the CM100DY-28H specifies a recommended gate-emitter voltage (Vge) of +15V for turn-on and -10V for turn-off. Using a negative voltage for turn-off is crucial for ensuring rapid and clean switching while preventing parasitic turn-on due to the Miller effect, especially in half-bridge configurations. The gate driver must be capable of supplying sufficient peak current to charge and discharge the gate capacitance quickly to minimize switching losses.
Selecting a power module extends beyond primary ratings to encompass a strategic assessment of system-level reliability and efficiency. The CM100DY-28H represents a targeted design choice, prioritizing voltage robustness for specific industrial grids while maintaining strong thermal performance through low conduction losses. This balance makes it a valuable asset for engineers developing next-generation industrial drives and power converters where operational uptime is a critical performance indicator. For more on the technologies from leading manufacturers like Mitsubishi, further research into their specific IGBT generations is recommended.
