Content last revised on January 12, 2026
Mitsubishi CM100DY-24H | Robust 1200V Dual IGBT for High-Reliability Power Conversion
The Mitsubishi CM100DY-24H is an H-Series dual IGBT module engineered for demanding power conversion applications. This component is not just a switch; it's a cornerstone for building efficient, reliable, and cost-effective systems. By integrating two IGBTs in a half-bridge configuration within a single, industry-standard package, it offers a streamlined solution for engineers working on motor drives, power supplies, and general-purpose inverters.
Product Highlights at a Glance
- Voltage and Current Rating: Robust 1200V collector-emitter voltage (Vces) and 100A continuous collector current (Ic), providing significant headroom for industrial applications.
- Low Conduction Loss: Features a low saturation voltage (Vce(sat)) of typically 1.80V, directly translating to higher operational efficiency and reduced thermal management requirements.
- Integrated FWD: Includes a co-packaged soft-recovery free-wheeling diode (FWD), optimized for handling inductive loads with minimal voltage overshoot and EMI.
- Proven Reliability: Part of Mitsubishi's established H-Series, known for its long-term performance and durability in the field.
Technical Deep-Dive: Engineering for Performance
The performance of the Mitsubishi CM100DY-24H is rooted in its fundamental design choices. Two characteristics are particularly crucial for system designers: its low Vce(sat) and the performance of its integrated diode.
First, the module leverages an advanced trench-gate structure. Unlike older planar gate designs, the trench gate architecture increases channel density, which significantly reduces on-state resistance. The direct engineering benefit is a lower collector-emitter saturation voltage (VCE(sat)). For the end application, this means less power is dissipated as heat during the conduction phase, allowing for smaller heatsinks, higher power density, and lower operating costs over the system's lifecycle. A deep understanding of this parameter is vital, as it goes beyond simple Vce(sat) selection for efficient design.
Second, the co-packaged soft-recovery FWD is critically important. In applications like motor drives, the diode must safely commutate the current from inductive loads during the IGBT's off-state. A "snappy" or abrupt recovery can induce significant voltage spikes and electromagnetic interference (EMI). The FWD in the CM100DY-24H is specifically engineered for soft recovery, exhibiting a smooth turn-off characteristic. This minimizes voltage overshoot, protects the IGBT, and simplifies the design and cost of external snubber circuits and EMI filtering.
Key Parameter Overview
The following table provides essential specifications for design-in. For comprehensive electrical and thermal characteristics, Download the Mitsubishi CM100DY-24H Datasheet.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (Vces) | 1200 V |
| Collector Current (Ic) @ Tc=25°C | 100 A |
| Collector-Emitter Saturation Voltage (Vce(sat)) @ Ic=100A | 2.20 V (Max) |
| Gate-Emitter Voltage (Vges) | ±20 V |
| Maximum Junction Temperature (Tj) | 150 °C |
| Package Type | Standard Industrial Module |
Application Scenarios and Value Proposition
The Mitsubishi CM100DY-24H is a versatile workhorse, demonstrating clear value in several core applications:
- Variable Frequency Drives (VFDs): In VFDs, where motors run for extended periods, the module's low Vce(sat) directly reduces operating energy consumption. Its ruggedness ensures reliable operation under the variable load conditions typical of pumps, fans, and conveyors.
- Servo Drives: The dynamic performance of a servo system depends on precise current control. The combination of a responsive IGBT and a soft-recovery FWD allows for the high-frequency switching and smooth current transitions necessary for powering precision in robotic servo drives.
- Uninterruptible Power Supplies (UPS): Reliability is non-negotiable in UPS systems. The CM100DY-24H provides the robust power handling and proven design longevity required to ensure seamless power delivery during outages, protecting critical infrastructure.
Frequently Asked Questions (FAQ)
Q1: What are the key considerations for the gate drive circuit for the CM100DY-24H?
A: To ensure optimal switching performance and reliability, a dedicated gate driver IC is recommended. The gate-emitter voltage (Vge) should be driven to +15V for full enhancement (low Vce(sat)) and to a negative voltage, typically -5V to -10V, for a decisive turn-off. A negative gate voltage provides a strong buffer against parasitic turn-on caused by the Miller effect, especially during high dv/dt events in the half-bridge configuration.
Q2: Can the CM100DY-24H be paralleled to achieve higher current ratings?
A: Yes, paralleling is possible but requires careful engineering. To ensure proper current sharing, designers must focus on two areas: symmetrical PCB layout to equalize stray inductances in the power path and effective thermal management to keep the junction temperatures of the paralleled modules closely matched. Mismatched temperatures can lead to thermal runaway, as the Vce(sat) has a negative temperature coefficient. These components form the backbone of many high-power systems, and understanding their application is key to designing efficient power electronics.
For detailed application support or to discuss your specific design requirements, please contact our technical team.
