#MITSUBISHI, #CM800HA_66H, #IGBT_Module, #IGBT, CM800HA-66H Insulated Gate Bipolar Transistor, 800A I(C), 3300V V(BR)CES, N-Channel, MODULE-7; CM800HA-66H
Manufacturer Part Number: CM800HA-66HPbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: Mitsubishi ELECTRIC CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X7Pin Count: 7Manufacturer: Mitsubishi ElectricRisk Rank: 5.19Case Connection: ISOLATEDCollector Current-Max (IC): 800 ACollector-Emitter Voltage-Max: 3300 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7Number of Elements: 1Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 6940 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 800A I(C), 3300V V(BR)CES, N-Channel, MODULE-7