Mitsubishi CM1200HC-66H | High-Reliability 3300V IGBT for Megawatt-Scale Power Conversion
The Mitsubishi CM1200HC-66H is a high-power IGBT module engineered for the demanding world of high-voltage, high-current applications. Designed as a cornerstone component for next-generation power electronics, this module delivers an exceptional balance of performance, efficiency, and robustness, enabling designers to build more compact and reliable systems for megawatt-class power conversion.
- Robust 3.3kV / 1200A Rating: Provides the necessary voltage and current headroom for high-power industrial and renewable energy applications, simplifying inverter design and enhancing system safety margins.
- Advanced CSTBT™ Technology: Incorporates Mitsubishi's proprietary Carrier Stored Trench-Gate Bipolar Transistor (CSTBT™) chip technology, achieving an optimal trade-off between low conduction losses (Vce(sat)) and switching performance.
- Enhanced Thermal Performance: Built with an AlN (Aluminum Nitride) ceramic substrate, the module ensures superior thermal conductivity, facilitating efficient heat dissipation and improving power cycling capability under heavy loads.
- High Isolation for System Safety: Features a high isolation voltage of 6000 Vrms, ensuring reliable operation and safety in systems with high DC-link voltages.
Key Parameters Overview
For engineers requiring immediate technical data, the following table summarizes the core electrical and thermal characteristics of the CM1200HC-66H. These specifications are critical for initial design-in, simulation, and performance evaluation.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCES) | 3300 V |
| Collector Current (IC) | 1200 A |
| Collector-Emitter Saturation Voltage (VCE(sat)) typ. @ Tj=125°C | 3.10 V |
| Maximum Junction Temperature (Tj max) | 150 °C |
| Thermal Resistance, Junction to Case (Rth(j-c)) per IGBT | 0.012 °C/W |
| Isolation Voltage (Visol), AC 1 minute | 6000 Vrms |
For a comprehensive list of all parameters, characteristics, and graphs, you can download the official CM1200HC-66H datasheet.
Technical Deep Dive: The CSTBT™ Advantage
At the heart of the CM1200HC-66H's superior performance is Mitsubishi's CSTBT™ technology. Unlike conventional trench IGBTs, this structure incorporates a carrier-stored layer beneath the N-drift region. This innovative design allows for a significant reduction in the on-state voltage drop, or VCE(sat), by enhancing carrier conductivity. For system designers, this translates directly into lower conduction losses, which is the dominant loss factor in high-current, lower-frequency applications like motor drives. This efficiency gain allows for smaller heatsinks, reduced cooling system costs, and higher overall system power density.
Application Scenarios & Value Proposition
The robust specifications of the CM1200HC-66H make it an ideal solution for systems where reliability and power density are non-negotiable.
- Medium-Voltage Drives (MVDs): In industries such as mining, water treatment, and marine propulsion, the 3.3kV rating enables the design of simpler, more efficient multi-level inverter topologies. This reduces component count, minimizes system complexity, and improves the reliability of heavy-duty motor control systems.
- Railway Traction Inverters: The module's high power cycling capability and rugged construction are essential for the demanding operational profile of main propulsion inverters in electric trains and locomotives, ensuring long service life under constant acceleration and braking cycles.
- Grid-Tied Renewable Energy Systems: For large-scale wind turbine inverters and central solar inverters, the CM1200HC-66H facilitates higher power output per inverter unit. Its high voltage rating can reduce or eliminate the need for costly and bulky step-up transformers, improving grid connection efficiency.
Industry Insight & Strategic Advantage
As global trends push towards electrification and decarbonization, the demand for efficient high-voltage power conversion is accelerating. The Mitsubishi CM1200HC-66H is not just a component; it is an enabler for this transition. By allowing engineers to design systems that operate at higher DC bus voltages, this module directly contributes to reducing I²R losses in cabling and improving the power-to-weight ratio of inverters. This strategic advantage is critical in applications from electric railways to utility-scale energy storage, positioning any system built with it at the forefront of power electronics innovation.
Frequently Asked Engineer Questions (FAQ)
1. What are the key considerations when paralleling CM1200HC-66H modules for higher current output?
Paralleling these high-current IGBT modules requires careful attention to symmetrical layout. Ensure that the DC busbar inductance is minimized and identical for each module to guarantee dynamic current sharing during switching events. The positive temperature coefficient of VCE(sat) provides inherent static balancing, but a well-engineered gate drive circuit with individual gate resistors is crucial to prevent oscillations and ensure synchronized turn-on/turn-off.
2. How critical is thermal design for maximizing the performance of this module?
For a 1200A module, thermal management is paramount. While the module's low internal thermal resistance (Rth(j-c)) is a key feature, the overall performance is heavily dependent on the external thermal path. A high-performance heatsink (air or liquid-cooled) combined with a high-conductivity thermal interface material (TIM) and correct mounting torque is essential to keep the junction temperature within the safe operating area. Properly managing this is key to unlocking IGBT thermal performance and ensuring long-term reliability.
