#MITSUBISHI, #PM30CMA060, #IGBT_Module, #IGBT, PM30CMA060 Insulated Gate Bipolar Transistor 30A I(C) 600V V(BR)CES N-Channel H15 POWER MODULE-20; PM30CMA060
Manufacturer Part Number: PM30CMA060
Part Life Cycle Code: Obsolete
Ihs Manufacturer: Powerex INC
Part Package Code: MODULE
Package Description: FLANGE MOUNT, R-PUFM-X20
Pin Count: 20
Manufacturer: Powerex Power semiconductors
Risk Rank: 5.84
Additional Feature: CURRENT SENSE IGBT CHIP,DRIVE CIRCUITRY AND PROTECTION CIRCUITRY IN A MODULE
Collector Current-Max (IC): 30 A
Collector-Emitter Voltage-Max: 600 V
Configuration: COMPLEX
JESD-30 Code: R-PUFM-X20
Number of Elements: 6
Number of Terminals: 20
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Qualification Status: Not Qualified
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Element Material: SILICON
Insulated Gate Bipolar Transistor 30A I(C) 600V V(BR)CES N-Channel H15 POWER MODULE-20