FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1xm fine rule process.For example, typical Vce(sat)=1 .9V @Tj=125°C
b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each con-
servation upper and lower arm of IPM.
c) New small package
Reduce the package size by 32%, thickness by 22% from S-DASH series.
●3φ 75A, 1200V Current-sense IGBT type inverter
●Monolithic gate drive & protection logic
●Detection, protection & status indication circuits for, short- circuit, over-temperature & under-voltage (P-Fo available
from upper arm devices)
●Acoustic noise-less 11kW/1 5kW class inverter application
Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :75A
Collector current Icp 1ms Tc=25°C :150A
Collector power dissipation Pc:595W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 2.5~3.5 N·m
Weight 340 g
