Product Tag:
3300v
FZ1000R33HE3 Infineon technical information 3300V 1000A
CM800E6C-66H Mitsubishi Hvight modules high power switching use insulated type 3300V 800A
CM800E2Z-66H Mitsubishi Hvigbt modules High power switching use insulated type 3300V 800A
FZ1200R33KL2C-B5 Infineon IGBT High-Power Module 3300V 1200A
FZ1200R33KF2-B5 Infineon Maximum rated values 3300V 1200A
SKM450GB33F Semikron SEMITRANS 20 Half Bridge 33F-IGBT In production 3300V 450A
Infineon DD800S33K2C: A robust 3300V/800A dual diode module engineered for high-power conversion. Delivers superior reliability and thermal performance for MVD and renewable energy systems.
CM400HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 400A 3300V
FF400R33KF2C 3300 V 400 A dual IGBT module 3300V 400A DUAL
Mitsubishi CM1500HC-66R: 3.3kV/1500A HVIGBT. CSTBT™ tech ensures ultra-low Vce(sat) and soft recovery for superior efficiency and reliability in high-power designs.
