Features of IGBT3 and Emitter Controlled High Efficiency Diode:
- These components provide high efficiency and are designed for applications requiring a Collector-Emitter Voltage of 1200V and a Continuous DC Collector Current of 300A.
- The Repetitive Peak Collector Current is rated at 600A for a pulse duration of 1ms, ensuring reliable performance.
- With a Total Power Dissipation of 1450W, these devices can handle high power levels while maintaining efficient operation.
- The Gate-Emitter Peak Voltage is ±20V, offering precise control and protection.
- Operating in a wide temperature range, from -40°C to 150°C under switching conditions (Tvj op), these components are suitable for demanding environments.
- They can be safely stored within a temperature range of -40°C to 125°C (Tstg).
- With a weight of 340g, these components are compact and lightweight, facilitating installation and integration.
