2A75HB12C1U SEMIKRON 1200V 75A Half-Bridge IGBT Module

Content last revised on November 21, 2025

2A75HB12C1U | 1200V 75A Dual IGBT Module for High-Frequency Power Systems

Introduction & Key Highlights

Engineered for performance in demanding power conversion systems, the 2A75HB12C1U is a dual IGBT module that delivers a robust balance of switching efficiency and thermal stability. With its core specifications of 1200V | 75A | Rth(j-c) 0.38 K/W, this module provides the foundation for reliable and compact inverter and drive designs. Key engineering benefits include optimized switching losses for higher frequency operation and low thermal resistance for effective heat management. This module directly addresses the challenge of achieving high power density without compromising on operational reliability under cyclical loads. For industrial drives where thermal headroom is a critical design constraint, this module's thermal performance offers a distinct advantage.

Application Scenarios & Value

Driving Efficiency and Reliability in Industrial Motion Control

The 2A75HB12C1U is engineered for high-performance applications where precise control and long-term reliability are paramount. Its robust 1200V blocking voltage and 75A nominal current rating make it a prime candidate for the power stages of Variable Frequency Drives (VFDs), servo drives, and industrial robotics. In a typical VFD application, the primary engineering challenge is managing the heat generated by switching losses, especially as carrier frequencies increase to reduce motor noise and improve control accuracy.

The 2A75HB12C1U's total switching energy (Eon + Eoff) of 13.7 mJ at 125°C is a critical parameter that allows engineers to accurately model and predict thermal performance, ensuring the junction temperature remains within its Safe Operating Area (SOA) even under demanding load profiles. The low thermal resistance from junction to case (RthJC) of 0.38 K/W facilitates efficient heat transfer to the heatsink, which is essential for maintaining system stability and extending the operational life of the entire drive. For systems requiring higher current handling capabilities, the related 2MBI200NB-120 offers a higher current rating within a similar voltage class.

Key Parameter Overview

Decoding the Specs for Robust Power Stage Design

The following parameters are critical for system-level design and performance evaluation. The values presented here are based on the official datasheet and highlight the module's capabilities in key operational areas.

Download the 2A75HB12C1U datasheet for detailed specifications and performance curves.

Technical Deep Dive

A Closer Look at Thermal Resistance and its Impact on System Longevity

A critical, yet often underestimated, parameter in power module selection is the thermal resistance from junction to case, Rth(j-c). For the 2A75HB12C1U, this value is specified at 0.38 K/W (or °C/W). This figure is not just a number; it is a direct measure of how efficiently heat, the primary byproduct of electrical losses, can be extracted from the active IGBT silicon chip to the module's copper baseplate. Think of it as the width of a highway for heat: a lower Rth(j-c) value is like having a wider, multi-lane expressway, allowing thermal energy to escape quickly and preventing a "traffic jam" of heat at the junction.

This efficient heat extraction directly translates into higher system reliability and power density. For a given power dissipation, a lower Rth(j-c) results in a lower operating junction temperature. Since the failure rate of semiconductor devices increases exponentially with temperature, keeping the junction cooler extends the module's operational lifespan and improves its power cycling capability, which is crucial in applications with frequent start/stop cycles like servo drives. This superior thermal pathway gives engineers more design flexibility, potentially allowing for smaller, more cost-effective heatsinks or the ability to push the system harder under transient load conditions without exceeding the maximum junction temperature of 175°C.

Engineering FAQ

What is the primary benefit of the 0.38 K/W Rth(j-c) value?
This low thermal resistance value signifies efficient heat extraction from the IGBT chip to the module's baseplate. For a design engineer, this translates directly to a lower junction temperature for a given power dissipation, which enhances the module's reliability and longevity. It can also enable more compact system designs by potentially reducing the required heatsink size.

How does the 2.50V VCE(sat) at 125°C impact system efficiency?
The collector-emitter saturation voltage (VCE(sat)) is the voltage drop across the IGBT when it is fully on. This value is a primary contributor to conduction losses. A VCE(sat) of 2.50V under nominal current and at a realistic operating temperature of 125°C represents a controlled level of power loss during the on-state. This allows for predictable thermal calculations and ensures the module operates efficiently in applications like motor drives and uninterruptible power supplies (UPS) where conduction losses are a significant portion of the total thermal load.

What does the Gate Charge (Qg) of 0.57 µC imply for gate driver design?
A lower gate charge is generally desirable for high-frequency applications as it reduces the energy required from the gate driver to switch the IGBT on and off. The 0.57 µC value represents a balanced characteristic, enabling reasonably fast switching speeds suitable for many industrial VFD and power supply applications without demanding excessive gate drive power. It allows for efficient operation at PWM frequencies that balance motor performance with switching losses.

Is the 1200V Vces rating suitable for 480V AC line applications?
Yes, a 1200V collector-emitter voltage rating provides substantial design margin for applications operating on 400V to 480V AC lines. This margin is critical for handling voltage overshoots caused by stray inductance during switching and potential line voltage fluctuations, ensuring the device remains within its safe operating parameters and enhancing overall system robustness.

Strategic Considerations for Power System Design

Integrating the 2A75HB12C1U into a power system requires a holistic view that extends beyond its core ratings. Its thermal performance, defined by a low Rth(j-c), should be leveraged as a strategic asset. This allows designers to either enhance long-term reliability by operating at lower junction temperatures or increase the power density of the final product. The module's balanced switching and conduction losses make it a versatile component for optimizing system efficiency across a range of industrial applications, aligning with broader industry trends toward more compact, reliable, and energy-efficient power conversion solutions. For a comprehensive understanding of how module selection impacts overall system design, engineers can refer to resources like the practical guide to IGBT selection.