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Infineon FP35R12W2T4 New IGBT Module

#Infineon, #FP35R12W2T4, #IGBT_Module, #IGBT, FP35R12W2T4 Insulated Gate Bipolar Transistor 54A I(C) 1200V V(BR)CES N-Channel MODULE-35; FP35R12W2T4
  • Category: IGBT Module
  • Manufacturer:Infineon
  • Package Type: IGBT module
  • Date Code: 2021+
  • Available Qty: 249

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FP35R12W2T4 Description

Sell FP35R12W2T4, #Infineon #FP35R12W2T4 New Stock, FP35R12W2T4 Insulated Gate Bipolar Transistor 54A I(C) 1200V V(BR)CES N-Channel MODULE-35; FP35R12W2T4, #IGBT_Module, #IGBT, #FP35R12W2T4
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Manufacturer Part Number: FP35R12W2T4
Pbfree Code: Yes
Part Life Cycle Code: Active
Manufacturer: Infineon TECHNOLOGIES AG
Part Package Code: MODULE
Package Description: FLANGE MOUNT, R-XUFM-X23
Pin Count: 35
ECCN Code: EAR99
Case Connection: ISOLATED
Collector Current-Max (IC): 54 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: COMPLEX
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X23
Number of Elements: 7
Number of Terminals: 23
Operating Temperature-Max: 175 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 215 W
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Insulated Gate Bipolar Transistor 54A I(C) 1200V V(BR)CES N-Channel MODULE-35

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