Infineon BSM10GD120DN2 | Engineered for Robust Low-Power Motor Drives and SMPS
The Infineon BSM10GD120DN2 is a time-tested 1200V, 10A dual IGBT module that has earned its reputation as a workhorse in low-to-medium power conversion applications. Housed in the industry-standard EconoPACK™ 2 package, this module provides engineers with a reliable, cost-effective, and easy-to-integrate solution for systems where durability and predictable performance are paramount. It represents a cornerstone component for designers building robust and efficient power stages.
- Voltage and Current Rating: 1200V Collector-Emitter Voltage (V_CES) and 10A continuous Collector Current (I_C), providing substantial design margin for 380/400V AC line applications.
- Half-Bridge Configuration: Features two IGBTs in a half-bridge (phase-leg) topology, ideal for inverter and chopper circuits.
- Proven NPT Technology: Built with Non-Punch-Through (NPT) IGBT technology, known for its ruggedness and excellent short-circuit withstand capabilities.
- Integrated FWD: Includes a co-packaged fast-recovery free-wheeling diode optimized for soft-switching behavior, reducing turn-on losses in the IGBT.
Key Technical Specifications
The following table provides a quick reference for the core electrical and thermal characteristics of the BSM10GD120DN2, crucial for initial design and component selection.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (V_CES) | 1200 V |
| Continuous Collector Current (I_C @ Tc=80°C) | 10 A |
| Collector-Emitter Saturation Voltage (V_CE(sat), typ. @ 10A, 150°C) | 2.2 V |
| Configuration | Dual / Half-Bridge |
| Package | EconoPACK™ 2 |
Application Scenarios & Engineering Value
The BSM10GD120DN2 is not a universal solution; it is a specialist. Its design strengths translate directly into performance advantages in specific industrial applications.
- Small-Scale Variable Frequency Drives (VFDs): In motor drives for pumps, fans, and conveyors up to approximately 2.2 kW, this module's robust SOA (Safe Operating Area) and thermal stability ensure reliable operation under demanding motor startup and load-change conditions. The integrated half-bridge simplifies the power stage layout significantly.
- Uninterruptible Power Supplies (UPS): For single-phase online UPS systems, the BSM10GD120DN2 provides the reliability needed for critical power backup. Its 1200V rating offers excellent transient voltage immunity on unstable grids.
- Welding & Switched-Mode Power Supplies (SMPS): In power supplies for welding or other industrial processes, the module's proven NPT silicon can handle the pulsed power demands and offers a high degree of fault tolerance, which is critical in these environments.
Technical Deep Dive: NPT Technology and Package Design
Understanding the technology inside the Infineon BSM10GD120DN2 reveals why it remains a solid choice. Unlike modern Trench-Field-Stop (TFS) IGBTs that prioritize minimal conduction losses, this module's NPT IGBTs are optimized for ruggedness. This technology results in a positive temperature coefficient for V_CE(sat), which simplifies paralleling of dies within the module but requires careful thermal design. The primary benefit is a wider, more forgiving SOA, making the device less susceptible to failure during unexpected overcurrent events.
The EconoPACK™ 2 package further enhances its industrial credentials. Its screw terminals ensure secure, low-resistance connections, while the isolated copper baseplate provides excellent thermal transfer to a heatsink and simplifies assembly by guaranteeing electrical isolation. For engineers, this means faster, more reliable manufacturing and maintenance cycles. For a deeper understanding of how to manage heat effectively, explore our guide on why thermal resistance (Rth) matters in unlocking IGBT performance.
Frequently Asked Engineering Questions (FAQ)
Our experts often receive questions about implementing these established IGBT modules. Here are two common points:
A standard gate drive voltage of +15V for turn-on and a negative voltage between -8V and -15V for turn-off is recommended. The negative turn-off voltage is crucial for ensuring noise immunity and preventing parasitic turn-on, especially given the module's older generation gate characteristics. Proper gate resistor selection is vital to balance switching speed against voltage overshoot and EMI generation.
Yes, as with any power module. Due to its V_CE(sat) of around 2.2V, conduction losses can be significant at its nominal current. Effective thermal management—using a quality thermal interface material (TIM), applying correct mounting pressure, and selecting an adequately sized heatsink—is non-negotiable for achieving target lifetime and reliability. Neglecting this will lead to premature IGBT failure from overtemperature.
For detailed design-in support or to discuss your specific power conversion challenges, please contact our technical team.
